重离子辐照带有ECC的65 nm SRAM器件&ldquo;伪多位翻转&rdquo;特性研究

王斌; 刘杰; 刘天奇; 习凯; 叶兵; 侯明东; 孙友梅; 殷亚楠; 姬庆刚; 赵培雄; 李宗臻

doi:10.11804/NuclPhysRev.35.01.066

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重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

王斌, 刘杰, 刘天奇, 习凯, 叶兵, 侯明东, 孙友梅, 殷亚楠, 姬庆刚, 赵培雄, 李宗臻

文章导航 > 原子核物理评论 > 2018 > 35(1): 66-71

王斌, 刘杰, 刘天奇, 习凯, 叶兵, 侯明东, 孙友梅, 殷亚楠, 姬庆刚, 赵培雄, 李宗臻. 重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究[J]. 原子核物理评论, 2018, 35(1): 66-71. doi: 10.11804/NuclPhysRev.35.01.066

引用本文:

WANG Bin, LIU Jie, LIU Tianqi, XI Kai, YE Bing, HOU Mingdong, SUN Youmei, YIN Yanan, JI Qinggang, ZHAO Peixiong, LI Zongzhen. Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC[J]. Nuclear Physics Review, 2018, 35(1): 66-71. doi: 10.11804/NuclPhysRev.35.01.066

Citation:

WANG Bin, LIU Jie, LIU Tianqi, XI Kai, YE Bing, HOU Mingdong, SUN Youmei, YIN Yanan, JI Qinggang, ZHAO Peixiong, LI Zongzhen. Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC[J]. Nuclear Physics Review, 2018, 35(1): 66-71. doi: 10.11804/NuclPhysRev.35.01.066

重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

doi: 10.11804/NuclPhysRev.35.01.066

王斌^1,2,
刘杰^1,,
刘天奇¹,
习凯³,
叶兵^1,2,
侯明东¹,
孙友梅^1,2,
殷亚楠^1,2,
姬庆刚^1,2,
赵培雄^1,2,
李宗臻^1,2

1.
中国科学院近代物理研究所, 兰州 730000;
2.
中国科学院大学, 北京 100049;
3.
中国科学院微电子研究所, 北京 100029

基金项目: 国家自然科学基金资助项目（11690041，11675233）

详细信息

作者简介:
王斌(1989-),男,陕西旬邑人,博士研究生,从事宇航元器件单粒子效应研究;E-mail:binjingshi@163.com

通讯作者: 刘杰,E-mail:j.liu@impcas.ac.cn。

中图分类号: O571.33

Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

1.
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2.
University of Chinese Academy of Sciences, Beijing 100049, China;
3.
Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China

Funds: National Natural Science Foundation of China (11690041, 11675233)

摘要: 为了提高纠错编码（ECC）的有效性，先进的静态随机存储器（SRAM）多采用位交错结构。但是，在没有物理版图信息的情况下，位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件，研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助，完善了判别MCU的基本法则。除此之外，研究结果表明，ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中，需考虑更高层次的编码算法来抵抗单粒子翻转。

In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.
- 重离子辐照 /
- 静态随机存储器 /
- 错误检查和纠正 /
- 伪多位翻转
Abstract: In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.
- heavy ions irradiation /
- SRAM /
- error correction and detection /
- fake MBU

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重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

doi: 10.11804/NuclPhysRev.35.01.066

1. 中国科学院近代物理研究所, 兰州 730000;

2. 中国科学院大学, 北京 100049;

3. 中国科学院微电子研究所, 北京 100029

基金项目: 国家自然科学基金资助项目（11690041，11675233）

作者简介:
王斌(1989-),男,陕西旬邑人,博士研究生,从事宇航元器件单粒子效应研究;E-mail:binjingshi@163.com

通讯作者: 刘杰,E-mail:j.liu@impcas.ac.cn。

收稿日期: 2017-03-19
修回日期: 2017-04-25
刊出日期: 2018-03-20

中图分类号: O571.33

关键词:

摘要: 为了提高纠错编码（ECC）的有效性，先进的静态随机存储器（SRAM）多采用位交错结构。但是，在没有物理版图信息的情况下，位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件，研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助，完善了判别MCU的基本法则。除此之外，研究结果表明，ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中，需考虑更高层次的编码算法来抵抗单粒子翻转。

In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.

English Abstract

Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China;

3. Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China

Funds: National Natural Science Foundation of China (11690041, 11675233)

Received Date: 2017-03-19
Rev Recd Date: 2017-04-25
Publish Date: 2018-03-20

Keywords:

Abstract: In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.

引用本文:

Citation:

WANG Bin, LIU Jie, LIU Tianqi, XI Kai, YE Bing, HOU Mingdong, SUN Youmei, YIN Yanan, JI Qinggang, ZHAO Peixiong, LI Zongzhen. Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC[J]. Nuclear Physics Review, 2018, 35(1): 66-71. doi: 10.11804/NuclPhysRev.35.01.066