双面硅多条探测器的测试

李占奎; 巩伟; 谭继廉; 魏计房; 王柱生; 韩励想; 田大宇; 于 民; 王金延; 张录

doi:10.11804/NuclPhysRev.28.03.305

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双面硅多条探测器的测试

李占奎, 巩伟, 谭继廉, 魏计房, 王柱生, 韩励想, 田大宇, 于民, 王金延, 张录

文章导航 > 原子核物理评论 > 2011 > 28(3): 305-309

李占奎, 巩伟, 谭继廉, 魏计房, 王柱生, 韩励想, 田大宇, 于民, 王金延, 张录. 双面硅多条探测器的测试[J]. 原子核物理评论, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305

引用本文:

LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305

Citation:

LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305

双面硅多条探测器的测试

doi: 10.11804/NuclPhysRev.28.03.305

1 中国科学院近代物理研究所, 甘肃兰州 730000; 2 中国科学院研究生院, 北京 100190; 3 北京大学微电子研究院, 北京 100871

Test of Double-sided Multistrip Silicon Detectors

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China; 3 Institute of Microelectronics of Peking University, Beijing 100871, China

摘要: 介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括：探测器的电特性、能量分辨率、二维能谱、条间串扰（crosstalk）。在-25 V全耗尽偏压下，各条的反向漏电流均小于10 nA，对于5.486 MeV的α粒子，正面各条的能力分辨率在1.5%左右，条间串扰在6%左右；背面各条能量分辨率稍差，在3%左右，其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试，并进行了性能对比。The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.
- 双面硅条探测器 /
- 电性能 /
- 能量分辨率 /
- 条间串扰
Abstract: The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.
- double-sided multi-strip silicon detector /
- electrical characteristics /
- energy resolution /
- crosstalk

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双面硅多条探测器的测试

doi: 10.11804/NuclPhysRev.28.03.305

1 中国科学院近代物理研究所, 甘肃兰州 730000; 2 中国科学院研究生院, 北京 100190; 3 北京大学微电子研究院, 北京 100871

收稿日期: 1900-01-01
修回日期: 1900-01-01
刊出日期: 2011-09-20

关键词:

双面硅条探测器 /

电性能 /

能量分辨率 /

条间串扰

摘要: 介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括：探测器的电特性、能量分辨率、二维能谱、条间串扰（crosstalk）。在-25 V全耗尽偏压下，各条的反向漏电流均小于10 nA，对于5.486 MeV的α粒子，正面各条的能力分辨率在1.5%左右，条间串扰在6%左右；背面各条能量分辨率稍差，在3%左右，其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试，并进行了性能对比。The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.