Simulation of Single Event Effect by a Thermal Spike Model

PENG Haibo; GUAN Ming; WANG Tieshan; ZHAO Jiangtao; GUO Hongxia

doi:10.11804/NuclPhysRev.36.02.242

Single event effect (SEE) is an important reason that induces failures in space electronic components. Explanations of physical process are important to life evaluation of electronic devices and radiation hardening. Many models, in which cross section of SEE was related to the linear energy transfer (LET), were presented. However, according those models, temperature effects could not be explained. A new model, which is based on interactions of high-energy ion with material, is proposed. This model is employed to calculate the energy deposition, exchange and diffusion in material. The temperatures electron and lattice are obtained from thermal diffusion equations. Evolutions of electron and lattice with space and time are presented. The model suggested the concentration of free electrons and total collected charge induced by irradiation of ions were function of LET. The model explained an experimental effect that the cross sections of SEE increased with the temperature of device.

Simulation of Single Event Effect by a Thermal Spike Model

1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;

2. Key Laboratory of Special Function Materials and Structure Design Ministry of Education, Lanzhou University, Lanzhou 730000, China;

3. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(SKLIPRSE), Xi'an 710024, China

Funds: National Natural Science Foundation of China (11505085); Fundamental Research Funds for the Central Universities (lzujbky-2018-72); DSTI Foundation of Gansu (2018ZX-07); State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Special Funds Subsidized Projects (SKLIPR1708)

Received Date: 2018-09-15

Rev Recd Date: 2019-01-08

Publish Date: 2019-06-20

Key words:

Abstract: Single event effect (SEE) is an important reason that induces failures in space electronic components. Explanations of physical process are important to life evaluation of electronic devices and radiation hardening. Many models, in which cross section of SEE was related to the linear energy transfer (LET), were presented. However, according those models, temperature effects could not be explained. A new model, which is based on interactions of high-energy ion with material, is proposed. This model is employed to calculate the energy deposition, exchange and diffusion in material. The temperatures electron and lattice are obtained from thermal diffusion equations. Evolutions of electron and lattice with space and time are presented. The model suggested the concentration of free electrons and total collected charge induced by irradiation of ions were function of LET. The model explained an experimental effect that the cross sections of SEE increased with the temperature of device.

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Simulation of Single Event Effect by a Thermal Spike Model

doi: 10.11804/NuclPhysRev.36.02.242

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