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纳米级FDSOI 静态随机存取存储器重离子单粒子翻转效应

An Investigation of the SEU Response of SRAM in a 22 nm FDSOI Technology

  • 摘要: 全耗尽绝缘体上硅(FDSOI)工艺是制备高可靠宇航电子器件的理想半导体工艺,因此深入揭示FDSOI工艺器件的单粒子效应机理对抗辐射加固设计具有理论指导意义。针对22 nm FDSOI SRAM测试器件,研究了不同重离子及电学参数对器件单粒子翻转敏感性的影响规律及物理机制。实验结果表明,高LET值区域单粒子多单元翻转事件占比可达20%,且核心电压对单粒子翻转类型比例及发生概率影响较小;重离子倾角入射会显著增大器件的单粒子翻转截面,且重离子沿平行与垂直衬底阱区方向入射时的单粒子翻转截面差异可达130%。因此,FDSOI器件单粒子效应建模及抗辐射加固设计,必须考虑非直接扩散型电荷共享机制、衬底电势畸变触发寄生电流机制对单粒子瞬态电离电荷收集过程的影响。

     

    Abstract: The Fully Depleted Silicon on Insulator(FDSOI) process is considered an ideal semiconductor technology for producing highly reliable aerospace electronic devices. Therefore, a comprehensive understanding of the single event effects mechanism in FDSOI devices is of theoretical significance for radiation-hardened design. This paper focuses on 22 nm FDSOI SRAM test devices and investigates the impact patterns and physical mechanisms of different heavy ions and electrical parameters on the sensitivity of Single Event Upset(SEU) in the devices. Experimental results indicate that in regions with high Linear Energy Transfer(LET) values, the proportion of Multi-Cell Upset(MCU) can reach 20%. Additionally, the core voltage has a relatively minor impact on the type proportion and occurrence probability of SEU. The incidence angle of heavy ions significantly increases the SEU cross-section of the devices, with a 130% difference observed when heavy ions are incident along parallel and perpendicular directions to the substrate well region. Therefore, when modeling Single Event Effect in FDSOI devices and designing for radiation hardening, it is imperative to consider the influence of non-direct diffusion charge sharing mechanisms and substrate potential distortion-triggered parasitic current mechanisms on the transient ionization charge collection process.

     

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