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Volume 32 Issue S1
Nov.  2015
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BAO Yipin, LI Liuhe, LIU Junxi, ZHANG Xiao. Research Progress on High Power Pulsed Magnetron Sputtering[J]. Nuclear Physics Review, 2015, 32(S1): 52-58. doi: 10.11804/NuclPhysRev.32.S1.52
Citation: BAO Yipin, LI Liuhe, LIU Junxi, ZHANG Xiao. Research Progress on High Power Pulsed Magnetron Sputtering[J]. Nuclear Physics Review, 2015, 32(S1): 52-58. doi: 10.11804/NuclPhysRev.32.S1.52

Research Progress on High Power Pulsed Magnetron Sputtering

doi: 10.11804/NuclPhysRev.32.S1.52
  • Publish Date: 2015-11-20
  • Highpower impulse magnetron sputtering(HiPIMS) is a novel ionized physical vapor deposition (IPVD) technology with high power density and ionization rate. The power density of the high power pulse in HiPIMS could be as high as 103 kW/cm2. The peak of the target current up to 100 A can only be reached when the bias voltage reaches or exceedes the “snowslide type” voltage; the plasma density near the target could be as high as 1018 s 1019 m*3 and the ionization rate of the Cu plasma can reach be 60% s 70% in our test. The duration, frequency and shape of the pulse have a great influence on the plasma as well as the quality of the coatings. Compared with DC magnetron sputtering, smoother and denser films can be produced and better film adhesion can be achieved when HiPIMS is applied. Research shows that bias, deposition rate and pressure have influence on the HiPIM deposition progress, which will affect the microscopic structure and mechanical property of the film.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Research Progress on High Power Pulsed Magnetron Sputtering

doi: 10.11804/NuclPhysRev.32.S1.52

Abstract: Highpower impulse magnetron sputtering(HiPIMS) is a novel ionized physical vapor deposition (IPVD) technology with high power density and ionization rate. The power density of the high power pulse in HiPIMS could be as high as 103 kW/cm2. The peak of the target current up to 100 A can only be reached when the bias voltage reaches or exceedes the “snowslide type” voltage; the plasma density near the target could be as high as 1018 s 1019 m*3 and the ionization rate of the Cu plasma can reach be 60% s 70% in our test. The duration, frequency and shape of the pulse have a great influence on the plasma as well as the quality of the coatings. Compared with DC magnetron sputtering, smoother and denser films can be produced and better film adhesion can be achieved when HiPIMS is applied. Research shows that bias, deposition rate and pressure have influence on the HiPIM deposition progress, which will affect the microscopic structure and mechanical property of the film.

BAO Yipin, LI Liuhe, LIU Junxi, ZHANG Xiao. Research Progress on High Power Pulsed Magnetron Sputtering[J]. Nuclear Physics Review, 2015, 32(S1): 52-58. doi: 10.11804/NuclPhysRev.32.S1.52
Citation: BAO Yipin, LI Liuhe, LIU Junxi, ZHANG Xiao. Research Progress on High Power Pulsed Magnetron Sputtering[J]. Nuclear Physics Review, 2015, 32(S1): 52-58. doi: 10.11804/NuclPhysRev.32.S1.52

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