[1] 陈伟, 杨海亮, 郭晓强, 等. 科学通报, 2017, 62(10): 978. doi:  10.1360/N972016-00438

CHEN Wei, YANG Hailiang, GUO Xiaoqiang, et al. Chin Sci Bull, 2017, 62(10): 978. (in Chinese) doi:  10.1360/N972016-00438
[2] NILAMANI S, RAMAKRISHNAN V N. J Comput Electron, 2017, 16(1): 74. doi:  10.1007/s10825-016-0950-y
[3] LIU B J, CAI L. IEEE Trans Nucl Sci, 2022, 64(12): 2933. doi:  10.1109/TNS.2017.2772267
[4] LIU B J, CAI L. Microprocess Microsy, 2022, 90: 104518. doi:  10.1016/j.micpro.2022.104518
[5] Semiconductor Industry Association. International Technology Roadmap for Semiconductors (ITRS) 2013 Edition[EB/OL]. [2022-12-22] http://www.itrs.net/Links/2013ITRS/Home2013.htm.
[6] 刘保军, 张爽, 李闯. 固体电子学研究与进展, 2022, 42(2): 93. doi:  10.19623/j.cnki.rpsse.2022.02.008

LIU Baojun, ZHANG Shuang, LI Chuang. Research & Progress of SSE, 2022, 42(2): 93. (in Chinese) doi:  10.19623/j.cnki.rpsse.2022.02.008
[7] 刘忠永, 蔡理, 刘保军, 等. 电力电子技术, 2017, 51(9): 64.

LIU Zhongyong, CAI Li, LIU Baojun, et al. Power Electronics, 2017, 51(9): 64. (in Chinese)
[8] 刘忠永, 蔡理, 刘小强, 等. 微纳电子技术, 2017, 54(2): 80.

LIU Zhongyong, CAI Li, LIU Xiaoqiang, et al. Micronanoelectronic Technology, 2017, 54(2): 80. (in Chinese)
[9] 张鸿, 郭红霞, 潘霄宇, 等. 物理学报, 2021, 70(16): 162401. doi:  10.7498/aps.70.20210503

ZHANG Hong, GUO Hongxia, PAN Xiaoyu, et al. Acta Phys Sin, 2021, 70(16): 162401. (in Chinese) doi:  10.7498/aps.70.20210503
[10] LU J, LIU J, TIAN X, et al. IEEE Trans Electron Dev, 2020, 67(9): 3698. doi:  10.1109/TED.2020.3008398
[11] 刘保军, 杨晓阔, 陈名华. 电子与封装, 2022, 22(11): 110401. doi:  10.16257/j.cnki.1681-1070.2022.1108

LIU Baojun, YANG Xiaokuo, CHEN Minghua. Electronics & Packaging, 2022, 22(11): 110401. (in Chinese) doi:  10.16257/j.cnki.1681-1070.2022.1108
[12] 尚也淳. SiC材料和器件特性及其辐照效应的研究[D]. 西安: 西安电子科技大学, 2001: 64.

SHANG Yechun. Study on the Characteristics and Radiation Response of SiC Material and Devices[D]. Xi’An: Xidian University, 2001: 64. (in Chinese)
[13] 于庆奎, 曹爽, 张洪伟, 等. 原子能科学技术, 2019, 53(10): 2114. doi:  10.7538/yzk.2019.53.10.2114

YU Qingkui, CAO Shuang, ZHANG Hongwei, et al. Atomic Energy Science and Technology, 2019, 53(10): 2114. (in Chinese) doi:  10.7538/yzk.2019.53.10.2114
[14] 上官士鹏. 新材料器件单粒子效应脉冲激光模拟试验研究[D]. 北京: 中国科学院大学, 2020: 83.

SHANGGUAN Shipeng. Experimental Research of Single Event Effects on New Semiconductor by Pulsed Laser[D]. Beijing: University of Chinese Academy of Science, 2020: 83. (in Chinese)
[15] ARTOLA L, HUBERT G. IEEE Trans Nucl Sci, 2014, 61(4): 1611. doi:  10.1109/TNS.2014.2301877
[16] Silvaco Inc. Atlas User’s Manual[EB/OL]. [2022-12-22]. www. silvaco. com.
[17] SOOTKANEUNGA W, HOWIMANPORN S, CHOOKAEW S. Microelectron Reliab, 2018, 87: 259. doi:  10.1016/j.microrel.2018.07.032
[18] 张晋新, 贺朝会, 郭红霞, 等. 物理学报, 2014, 63(24): 248503. doi:  10.7498/aps.63.248503

ZHANG Jinxin, HE Chaohui, GUO Hongxia, et al. Acta Phys Sin, 2014, 63(24): 248503. (in Chinese) doi:  10.7498/aps.63.248503
[19] MANN R W, ZHAO M, KWON O S, et al. IEEE Trans VLSI Syst, 2020, 28(5): 1341. doi:  10.1109/TVLSI.2020.2974202
[20] LIN C H, GREENE B, NARASIMHA S, et al. 2014 IEEE International Electron Devices Meeting, 2014: 74. doi:  10.1109/IEDM.2014.7046977
[21] KHAN H R, MAMALUY D, VASILESKA D. IEEE Trans Electron Dev, 2008, 55(8): 2134. doi:  10.1109/TED.2008.925937
[22] LIU B J, LI C, LI CH, et al. Int J Circ Theor App, 2021, 49(10): 3408. doi:  10.1002/cta.3089
[23] LIU B J, LI C, ZHOU P, et al. Nucl Instr and Meth B, 2022, 530: 13. doi:  10.1016/j.nimb.2022.09.008