[1] |
BARILLOT C, CALVEL P. IEEE Transactions on Nuclear Science, 1996, 43(2): 453. doi: 10.1109/23.490914 |
[2] |
BINDER D, SMITH E C, HOLMAN A B. IEEE Transactions on Nuclear Science, 1975, 22(6): 2675. doi: 10.1109/TNS.1975.4328188. |
[3] |
ECOFFET R. IEEE Transactions on Nuclear Science, 2013, 60(3): 1791. doi: 10.1109/TNS.2013.2262002. |
[4] |
HARBOE-SORENSEN R, POIVEY C, ZADEH A, et al. IEEE Transactions on Nuclear Science, 2012, 59(4): 1086. doi: 10.1109/TNS.2012.2185062 |
[5] |
SIMOEN E, GAILLARDIN M, PAILLET P, et al. IEEE Trans Nucl Sci, 2013, 60(3 Part2): 1970. doi: 10.1109/TNS.2013.2255313 |
[6] |
VITALE S, WYATT P, CHECKA N, et al. Proceedings of the IEEE, 2010, 98(2): 333. doi: 10.1109/JPROC.2009.2034476 |
[7] |
GASIOT G, SOUSSAN D, GLORIEUX M, et al. SER/SELPerformances of SRAMs in UTBB FDSOI28 and Comparisons with PDSOI and BULK Counterparts[C]//IEEE International Reliability Physics Symposium, New York: IEEE, 2014. |
[8] |
ASPRILLA A, CORDOVA D, DEVAL Y, et al. IEEE Transactions on Circuits and Systems II Express Briefs, 2021, 68(2): 602. doi: 10.1109/TCSII.2020.3047464 |
[9] |
SCHWANK J R, FERLET-CAVROIS V, SHANEYFELT M R, et al. IEEE Transactions on Nuclear Science, 2003, 50(3): 522. doi: 10.1109/TNS.2003.812930 |
[10] |
DAVIS G E, HITE L R, BLAKE T, et al. IEEE Transactions on Nuclear Science, 1985, 32(6): 4431. doi: 10.1109/TNS.1985.4334137 |
[11] |
MUSSEAU O. IEEE Transactions on Nuclear Science, 1996, 43(2): 603. doi: 10.1109/23.490904 |
[12] |
GASIOT G, SOUSSAN D, GLORIEUX M, et al. SER/SEL Performances of SRAMs in UTBB FDSOI 28nm and Comparisons with PDSOI and BULK Counterparts[C]//IEEE International Reliability Physics Symposium. New York: Institute of Electrical and Electronics Engineer Inc, 2014 |
[13] |
CAI Chang, ZHAO Peixiong, XU Liwei, et al. Microelectronics Reliablity, 2019, 100-101: 113322. doi: 10.1016/j.microrel.2019.06.014 |
[14] |
MALHERBE V, GASIOT G, SOUSSAN D, et al. Alpha Soft Error Rate of FDSOI 28 nm SRAMs: Experimental Testing and Simulation Analysis[C]. New York: IEEE, 2015. |
[15] |
HEIDEL DAVID F, MARSHALL PAUL W, PELLISH JONATHAN A. et al. IEEE Transactions on Nuclear Science, 2009, 56(6): 3499. doi: 10.1109/TNS.2009.2033796 |
[16] |
AKKERMAN A, BARAK J. Nuclear Science IEEE Transactions on, 2002, 49(6): 3022. doi: 10.1109/TNS.2002.805366 |
[17] |
GASPARD N J, JAGANNATHAN S, DIGGINS Z J, et al. IEEE Transactions on Nuclear Science, 2013, 60(6 Part1): 4368. doi: 10.1109/TNS.2013.2289745 |
[18] |
DENNARD R H, GAENSSLEN F H, YU H N, et al. IEEE Solid-State Circuits Society Newsletter, 2007, 12(1): 38. doi: 10.1109/N-SSC.2007.4785543 |
[19] |
RAINE M, HUBERT G, GAILLARDIN M, et al. IEEE Transactions on Nuclear Science, 2011, 58(6): 2607. doi: 10.1109/TNS.2011.2168238 |
[20] |
RAINE M, GAILLARDIN M, LAGUTERE T, et al. IEEE Transactions on Nuclear Science, 2017, 65(1): 339. doi: 10.1109/TNS.2017.2779786 |
[21] |
赵凯, 高见头, 杨波, 等. 信息与电子工程, 2010, 8(01): 91. doi: cnki:sun:xxyd.0.2010-01-023
ZHAO Kai, GAO Jiantou, YANG Bo, et al. Information and Electronic Engineering, 2010, 8(01): 91. (in Chinese) doi: cnki:sun:xxyd.0.2010-01-023 |
[22] |
RAINE M, HUBERT G, GAILLARDIN M, et al. IEEE Transactions on Nuclear Science, 2011, 58(3): 840. doi: 10.1109/TNS.2011.2109966 |
[23] |
RAINE M, VALENTIN A, GAILLARDIN M, et al. IEEE Transactions on Nuclear Science, 2012, 59(6): 2697. doi: 10.1109/TNS.2012.2220783 |
[24] |
贺泽. 纳米存储器件和组合逻辑器件的单粒子效应研究[D]. 兰州: 中国科学院近代物理研究所, 2022.
HE Ze. Study of Single Event Effects on Nanoscale Memory Device and Combinational Logic Device[D]. Lanzhou: Institute of Modern Physics, Chinese Academy of Science, 2022. (in Chinese) |
[25] |
莫莉华. 新型FinFET器件和3D堆叠器件的单粒子效应研究[D]. 兰州: 中国科学院近代物理研究所, 2021.
MO Lihua. Investigation of Single Event Effects in New FinFET Device and 3D Stacked Device[D]. Lanzhou: Institute of Modern Physics, Chinese Academy of Science, 2021.(in Chinese) |
[26] |
蔡畅. 纳米SRAM型FPGA的单粒子效应及其加固技术研究[D]. 兰州: 中国科学院近代物理研究所, 2021.
CAI Chang. Study of Single Event Effects and Hardening Strategies on Nanoscale SRAM-based FPGA[D]. Lanzhou: Institute of Modern Physics, Chinese Academy of Science, 2021.(in Chinese) |
[27] |
ROCHE P, GASIOT G, FORBES K, et al. IEEE Transactions on Nuclear Science, 2003, 50(6): 2046. doi: 10.1109/TNS.2003.821588 |
[28] |
MERELLE T, SAIGNE F, SAGNES B, et al. IEEE Transactions on Nuclear Science, 2005, 52(5): 1538. doi: 10.1109/tns.2005.855823 |
[29] |
TIPTON A D, PELLISH J A, HUTSON J M, et al. IEEE Transactions on Nuclear Science, 2008, 55(6): 2880. doi: 10.1109/TNS.2008.2006503 |
[30] |
GIOT D, ROCHE P, GASIOT G, et al. IEEE Transactions on Nuclear Science, 2007, 54(4): 904. doi: 10.1109/tns.2007.902360 |