摘要:
FinFET 器件比主流CMOS 技术表现出更多优势，如快速、高集成度、低功耗、多功能性和强扩展性，基于ISE TCAD，考虑迁移率、量子效应、载流子重组、辐射效应等的影响，建立了一种纳米FinFET 器件SEE 的3D 仿真模型。分析了工艺掺杂浓度、栅压、粒子能量、寄生电容及技术节点等对单粒子瞬态电流的影响，并探讨了其影响机制。基于此分析，找到了一些潜在的工艺加固技术，如降低源极掺杂浓度、增加漏极和衬底的掺杂浓度、减少粒子能量、降低栅压、优化寄生电容等。FinFET presents more advantages than current bulk CMOS technologies, such as high speed, high density, lower power, more functionality and high scalability. A 3D single event effect model of nano-scale FinFET is simulated by using ISE TCAD. The considered physical models include mobility model, quantum effect model, recombination model and radiation effect model. The effects of the doping concentration, gate voltage, ion energy, parasitic capacitor, and technologies nodes on single event transient current in FinFET are analyzed. The possible mechanisms behind these effects are also presented. The results indicate some potential hardened technologies. It includes decreasing source doping concentration, increasing drain and substrate doping concentration, reducing ion energy,upgrading gate voltage (Vg) and optimizing parasitic capacitor.
Abstract:
FinFET presents more advantages than current bulk CMOS technologies, such as high speed, high density, lower power, more functionality and high scalability. A 3D single event effect model of nano-scale FinFET is simulated by using ISE TCAD. The considered physical models include mobility model, quantum effect model, recombination model and radiation effect model. The effects of the doping concentration, gate voltage, ion energy, parasitic capacitor, and technologies nodes on single event transient current in FinFET are analyzed. The possible mechanisms behind these effects are also presented. The results indicate some potential hardened technologies. It includes decreasing source doping concentration, increasing drain and substrate doping concentration, reducing ion energy,upgrading gate voltage (Vg) and optimizing parasitic capacitor.
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