An Application of 12MeV Electron Irradiation in Semiconductor Devices

Hang De-sheng

doi:10.11804/NuclPhysRev.12.02.067

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Volume 12 Issue 2

Jun. 1995

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Article Navigation > Nuclear Physics Review > 1995 > 12(2): 67-68

Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. doi: 10.11804/NuclPhysRev.12.02.067

Citation:

Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. doi: 10.11804/NuclPhysRev.12.02.067

An Application of 12MeV Electron Irradiation in Semiconductor Devices

doi: 10.11804/NuclPhysRev.12.02.067

Hang De-sheng

Departmet of Physics; Nanjing University; Nanjing 210008

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1995-06-20

Abstract

This article gives complete introduction to the principles, method and traits of the technology of the high-energy 12MeV electron irradiation. It also describes a successful application in fast diode, switch transistor and fast SCR.
- high-energy electron,
- fast diode,
- switch transistor,
- fast SCR,
- the lifetime of minority
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An Application of 12MeV Electron Irradiation in Semiconductor Devices

doi: 10.11804/NuclPhysRev.12.02.067

Hang De-sheng

Departmet of Physics; Nanjing University; Nanjing 210008

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1995-06-20

Key words:

Abstract: This article gives complete introduction to the principles, method and traits of the technology of the high-energy 12MeV electron irradiation. It also describes a successful application in fast diode, switch transistor and fast SCR.

Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. doi: 10.11804/NuclPhysRev.12.02.067

Citation:

Hang De-sheng. An Application of 12MeV Electron Irradiation in Semiconductor Devices[J]. Nuclear Physics Review, 1995, 12(2): 67-68. doi: 10.11804/NuclPhysRev.12.02.067