Development of Superthin Epitaxial Silicon Detectors

Wang Zhu-sheng; Chao Zhi-yuan; Xu Jin-lan

doi:10.11804/NuclPhysRev.12.03.055

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Article Navigation > Nuclear Physics Review > 1995 > 12(3): 55-57

Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. doi: 10.11804/NuclPhysRev.12.03.055

Citation:

Wang Zhu-sheng, Chao Zhi-yuan, Xu Jin-lan. Development of Superthin Epitaxial Silicon Detectors[J]. Nuclear Physics Review, 1995, 12(3): 55-57. doi: 10.11804/NuclPhysRev.12.03.055

Development of Superthin Epitaxial Silicon Detectors

doi: 10.11804/NuclPhysRev.12.03.055

Institute of Modern Physics; Chinese Academy of Sciences; Lanzhou 730000

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1995-09-20

Abstract

The epitaxial st-dE/dX surface barrier detectors with an active area of 28～154mm2 and thickness of 5. 2～10μm have been developed. This kind of detector can be used for measuring α-particle, proton with low energy and for distinguishing particles...
- epitaxial silicon,
- oxidize,
- energy resolution
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沈阳化工大学材料科学与工程学院沈阳 110142

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