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ZHANG Tao, ZHANG Tong-he, ZHANG Hui-xing, MA Ben-kun, LI Guo-qing, GONG Ze-xiang. Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material[J]. Nuclear Physics Review, 1997, 14(3): 173-176. doi: 10.11804/NuclPhysRev.14.03.173
Citation: ZHANG Tao, ZHANG Tong-he, ZHANG Hui-xing, MA Ben-kun, LI Guo-qing, GONG Ze-xiang. Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material[J]. Nuclear Physics Review, 1997, 14(3): 173-176. doi: 10.11804/NuclPhysRev.14.03.173

Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material

doi: 10.11804/NuclPhysRev.14.03.173
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 1997-09-20
  • Multicomponent ion beam enhanced deposition was used to synthesize (TiCr)N films. The films were characterized by AES,TEM and XRD methods. The electrochemical property and mechanics property of the films were measured. The experimental results show that the multicomponent ion beam enhanced deposition has stronger potential of new material development than physical vapour deposition.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material

doi: 10.11804/NuclPhysRev.14.03.173

Abstract: Multicomponent ion beam enhanced deposition was used to synthesize (TiCr)N films. The films were characterized by AES,TEM and XRD methods. The electrochemical property and mechanics property of the films were measured. The experimental results show that the multicomponent ion beam enhanced deposition has stronger potential of new material development than physical vapour deposition.

ZHANG Tao, ZHANG Tong-he, ZHANG Hui-xing, MA Ben-kun, LI Guo-qing, GONG Ze-xiang. Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material[J]. Nuclear Physics Review, 1997, 14(3): 173-176. doi: 10.11804/NuclPhysRev.14.03.173
Citation: ZHANG Tao, ZHANG Tong-he, ZHANG Hui-xing, MA Ben-kun, LI Guo-qing, GONG Ze-xiang. Applications of Multicomponent Ion Beam Enhanced Deposition in New Film Material[J]. Nuclear Physics Review, 1997, 14(3): 173-176. doi: 10.11804/NuclPhysRev.14.03.173

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