Ion Implantation in GaAs

LI Guo-hui; JI Cheng-zhou; LIU Yi-li; LUO Yan; HAN De-jun

doi:10.11804/NuclPhysRev.14.03.177

PDF
Cite
Share
facebook

twitter

google

linkedin

Volume 14 Issue 3

Turn off MathJax

Article Contents

Article Navigation > Nuclear Physics Review > 1997 > 14(3): 177-180

LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. doi: 10.11804/NuclPhysRev.14.03.177

Citation:

LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. doi: 10.11804/NuclPhysRev.14.03.177

Ion Implantation in GaAs

doi: 10.11804/NuclPhysRev.14.03.177

Institute of Low Energy Nuclear Physics; Beijing Normal University; Beijing 100875

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1997-09-20

Abstract

Optical and electrical properties of Si GaAs wafers implanted with Si⁺, S⁺, Be⁺, Mg⁺, B⁺, O⁺have been investigated in this paper.
- GaAs,
- ion implantation,
- rapid thermal annealing
References
Proportional views

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Get Citation

PDF

XML

Article Metrics

Article views(2043) PDF downloads(566) Cited by()

Proportional views

Ion Implantation in GaAs

doi: 10.11804/NuclPhysRev.14.03.177

Institute of Low Energy Nuclear Physics; Beijing Normal University; Beijing 100875

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1997-09-20

Key words:

Abstract: Optical and electrical properties of Si GaAs wafers implanted with Si⁺, S⁺, Be⁺, Mg⁺, B⁺, O⁺have been investigated in this paper.

LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. doi: 10.11804/NuclPhysRev.14.03.177

Citation:

LI Guo-hui, JI Cheng-zhou, LIU Yi-li, LUO Yan, HAN De-jun. Ion Implantation in GaAs[J]. Nuclear Physics Review, 1997, 14(3): 177-180. doi: 10.11804/NuclPhysRev.14.03.177