Study on Implanted Silicon with MeV Ions

LU Wu-xing; WU Yu-guang

doi:10.11804/NuclPhysRev.14.03.181

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Article Navigation > Nuclear Physics Review > 1997 > 14(3): 181-184

LU Wu-xing, WU Yu-guang. Study on Implanted Silicon with MeV Ions[J]. Nuclear Physics Review, 1997, 14(3): 181-184. doi: 10.11804/NuclPhysRev.14.03.181

Citation:

LU Wu-xing, WU Yu-guang. Study on Implanted Silicon with MeV Ions[J]. Nuclear Physics Review, 1997, 14(3): 181-184. doi: 10.11804/NuclPhysRev.14.03.181

Study on Implanted Silicon with MeV Ions

doi: 10.11804/NuclPhysRev.14.03.181

(Institute of Low Energy Nuclear Physics; Beijing Normal University; Beijing Radiation Center; Beijing 100875);

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1997-09-20

Abstract

This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.
- high energy implantation,
- enhanced annealing,
- defect engineering
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Study on Implanted Silicon with MeV Ions

doi: 10.11804/NuclPhysRev.14.03.181

(Institute of Low Energy Nuclear Physics; Beijing Normal University; Beijing Radiation Center; Beijing 100875);

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1997-09-20

Key words:

Abstract: This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.

LU Wu-xing, WU Yu-guang. Study on Implanted Silicon with MeV Ions[J]. Nuclear Physics Review, 1997, 14(3): 181-184. doi: 10.11804/NuclPhysRev.14.03.181

Citation:

LU Wu-xing, WU Yu-guang. Study on Implanted Silicon with MeV Ions[J]. Nuclear Physics Review, 1997, 14(3): 181-184. doi: 10.11804/NuclPhysRev.14.03.181