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Article Navigation >  Nuclear Physics Review  > 1998  >  15(3): 161-165

Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Citation: Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
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High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors

doi: 10.11804/NuclPhysRev.15.03.161

  • 1 Department of Physics; Wuhan University; Wuhan 4300722 Institute of Modern Physics; the Chinese Academy of Science; Lanzhou 730000

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 1998-09-20
  • Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...
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High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors

doi: 10.11804/NuclPhysRev.15.03.161
  • 1 Department of Physics; Wuhan University; Wuhan 4300722 Institute of Modern Physics; the Chinese Academy of Science; Lanzhou 730000
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 1998-09-20

Abstract:  Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...

Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
Citation: Chen Zhi-quan, Li Shi-qing, Wang Zhu, Hu Xin-wen, Wang Shao-jie, Hou Ming-dong. High Energy Heavy Ion Irradiation Effect in III V Compound Semiconductors[J]. Nuclear Physics Review, 1998, 15(3): 161-165. doi: 10.11804/NuclPhysRev.15.03.161
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