Study of Quantum Optoelectronic Material Prepared by Ion Implantation

Xie Er-qing; Wang Zhi-guang; Jin Yunfan

doi:10.11804/NuclPhysRev.15.03.166

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Article Navigation > Nuclear Physics Review > 1998 > 15(3): 166-169

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Citation:

Xie Er-qing, Wang Zhi-guang, Jin Yunfan. Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J]. Nuclear Physics Review, 1998, 15(3): 166-169. doi: 10.11804/NuclPhysRev.15.03.166

Study of Quantum Optoelectronic Material Prepared by Ion Implantation

doi: 10.11804/NuclPhysRev.15.03.166

1 Institute of Modern Physics; the Chinese Academy of Sciences; Lanzhou 730000 2 Department of Physics; Lanzhou University; Lanzhou 730000

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 1998-09-20

Abstract

The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.
- ion implantation,
- Si nanocrystals,
- quantum dot film
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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