Radiation Damage in Silicon Induced by Ion Irradiation
doi: 10.11804/NuclPhysRev.17.03.140
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2000-09-20
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Key words:
- ion irradiation /
- silicon /
- radiation damage /
- electronic energy loss
Abstract: The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...
Citation: | LIU Chang-long, ZHU Zhi-yong, HOU Ming-dong, JIN Yun-fan, WANG Zhi-guang. Radiation Damage in Silicon Induced by Ion Irradiation[J]. Nuclear Physics Review, 2000, 17(3): 140-145. doi: 10.11804/NuclPhysRev.17.03.140 |