Single Event Effects Induced by Heavy Ion in Semiconductor Device
doi: 10.11804/NuclPhysRev.17.03.165
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2000-09-20
-
Key words:
- single event effect /
- radiation damage /
- soft error /
- accelerator simulation
Abstract: Single event effects (SEE ′s) have been observed in semiconductor device in space since 1975. It has been verified from many spaceflight tests that single event effect induced by cosmic ray is one of the important sources of anomalies and malfunctions of spacecraft. Initially, a brief outline of space radiation environment is given. The history and recent trends were described, and basic methods and necessary facilities for SEE testing were also discussed. Finally, the research ...
Citation: | HOU Ming-dong, ZHEN Hong-lou, ZHANG Qing-xiang, LIU Jie, MA Feng. Single Event Effects Induced by Heavy Ion in Semiconductor Device[J]. Nuclear Physics Review, 2000, 17(3): 165-170. doi: 10.11804/NuclPhysRev.17.03.165 |