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LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
Citation: LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
shu

Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

doi: 10.11804/NuclPhysRev.18.03.164

  • Institute of Modern Physics; the Chinese Academy of Sciences; Lanzhou 730000; China

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2001-09-20
  • The transient enhanced diffusion in crystalline silicon implanted with dopants and followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed.
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Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods

doi: 10.11804/NuclPhysRev.18.03.164
  • Institute of Modern Physics; the Chinese Academy of Sciences; Lanzhou 730000; China
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2001-09-20

Abstract: The transient enhanced diffusion in crystalline silicon implanted with dopants and followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed.

LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
Citation: LIU Chang-long. Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods[J]. Nuclear Physics Review, 2001, 18(3): 164-168. doi: 10.11804/NuclPhysRev.18.03.164
shu

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