Approaches to Study Single Event Effects Induced by High Energy Protons in Devices

LIU Jie; HOU Ming-dong; ZHANG Qin-xiang; ZENG Hong-lou; SUN You-mei; LIU Chang-long; WANG Zhi-guang; ZHU Zhi-yong; JIN Yun-fan

doi:10.11804/NuclPhysRev.19.04.411

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Volume 19 Issue 4

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Article Navigation > Nuclear Physics Review > 2002 > 19(4): 411-415

LIU Jie, HOU Ming-dong, ZHANG Qin-xiang, ZENG Hong-lou, SUN You-mei, LIU Chang-long, WANG Zhi-guang, ZHU Zhi-yong, JIN Yun-fan. Approaches to Study Single Event Effects Induced by High Energy Protons in Devices[J]. Nuclear Physics Review, 2002, 19(4): 411-415. doi: 10.11804/NuclPhysRev.19.04.411

Citation:

LIU Jie, HOU Ming-dong, ZHANG Qin-xiang, ZENG Hong-lou, SUN You-mei, LIU Chang-long, WANG Zhi-guang, ZHU Zhi-yong, JIN Yun-fan. Approaches to Study Single Event Effects Induced by High Energy Protons in Devices[J]. Nuclear Physics Review, 2002, 19(4): 411-415. doi: 10.11804/NuclPhysRev.19.04.411

Approaches to Study Single Event Effects Induced by High Energy Protons in Devices

doi: 10.11804/NuclPhysRev.19.04.411

(Institute of Modern Physics; Chinese Academy of Sciences; Lanzhou 730000; China);

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2002-12-20

Abstract

This article introduces briefly the experimental and theoretical methods that have been used to study highenergy protoninduced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semiempirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, onorbit proton upset rates are predicted by using the heavyion test data. 
- single event effect,
- proton,
- semiconductor device
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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