Implantation Study of Silicon Cluster Ions Si<SUB>n</SUB><SUP>+</SUP>(n=1-3)Into Si Crystal

ZHAO Zi-qiang

doi:10.11804/NuclPhysRev.19.S1.098

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ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. doi: 10.11804/NuclPhysRev.19.S1.098

Citation:

ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Si_n⁺(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. doi: 10.11804/NuclPhysRev.19.S1.098

Implantation Study of Silicon Cluster Ions Si_n⁺(n=1-3)Into Si Crystal

doi: 10.11804/NuclPhysRev.19.S1.098

ZHAO Zi-qiang

(Institute of Heavy Ion Physics; Physics College; Peking University; Beijing 100871; China);

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2002-07-20

Abstract

In the case of Si + n (n=1-3) with energy of 0. 6 MeV/ion implantation into Si crystal, the mono-and bi-vacancies are formed i n the crystal. The optical absorption indicated that the defects, V 20 stat e, caused by cluster ions variy with the size of cluster. That is "Cluster Effe ct". Cluster zone and effect can be deduced by TRIM program and the experiment of positive electron annihilation.
- cluster ion,
- optical absorption,
- cluster zone
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Implantation Study of Silicon Cluster Ions Si_n⁺(n=1-3)Into Si Crystal

doi: 10.11804/NuclPhysRev.19.S1.098

ZHAO Zi-qiang

(Institute of Heavy Ion Physics; Physics College; Peking University; Beijing 100871; China);

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2002-07-20

Key words:

Abstract: In the case of Si + n (n=1-3) with energy of 0. 6 MeV/ion implantation into Si crystal, the mono-and bi-vacancies are formed i n the crystal. The optical absorption indicated that the defects, V 20 stat e, caused by cluster ions variy with the size of cluster. That is "Cluster Effe ct". Cluster zone and effect can be deduced by TRIM program and the experiment of positive electron annihilation.

ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Sin+(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. doi: 10.11804/NuclPhysRev.19.S1.098

Citation:

ZHAO Zi-qiang. Implantation Study of Silicon Cluster Ions Si_n⁺(n=1-3)Into Si Crystal[J]. Nuclear Physics Review, 2002, 19(Suppl): 98-101. doi: 10.11804/NuclPhysRev.19.S1.098