Study on Helium charged Titanium Films Deposited by DC magnetron Sputter
doi: 10.11804/NuclPhysRev.22.01.148
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2005-03-20
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Key words:
- helium /
- damage /
- bubble /
- Ti films /
- sputtering deposition
Abstract: Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarsegrain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.
Citation: | SHI Li-qun, JIN Qing-hua, LIU Chao-zhuo, XU Shi-lin, ZHOU Zhu-Yin. Study on Helium charged Titanium Films Deposited by DC magnetron Sputter[J]. Nuclear Physics Review, 2005, 22(1): 148-152. doi: 10.11804/NuclPhysRev.22.01.148 |