Defect Production in Silicon Carbide by Inert-gas-ion Irradiation

ZHANG Chong-hong

doi:10.11804/NuclPhysRev.23.02.185

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Volume 23 Issue 2

Jun. 2006

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ZHANG Chong-hong. Defect Production in Silicon Carbide by Inert-gas-ion Irradiation[J]. Nuclear Physics Review, 2006, 23(2): 185-188. doi: 10.11804/NuclPhysRev.23.02.185

Citation:

ZHANG Chong-hong. Defect Production in Silicon Carbide by Inert-gas-ion Irradiation[J]. Nuclear Physics Review, 2006, 23(2): 185-188. doi: 10.11804/NuclPhysRev.23.02.185

Defect Production in Silicon Carbide by Inert-gas-ion Irradiation

doi: 10.11804/NuclPhysRev.23.02.185

ZHANG Chong-hong

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2006-06-20

Abstract

This paper gives a review of our recent studies on the defect production in silicon carbide induced by energetic inert-gas-ion irradiation. The work includes the study of the dose threshold for helium bubble formation by combining TEM, RBS-channeling and PAS, the theoretical analysis of the dose threshold for bubble formation based on the Frozen-Matrix assumption, two types of bubble arrangement at different dose regions and the study of damage um-ion production behavior in the case of irradiation with heavier inert-gas-ions （ Ne, Xe） as a comparison to heliirradiation.
- （silicon carbide,
- irradiation damage,
- defect,
- helium bubble）
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Defect Production in Silicon Carbide by Inert-gas-ion Irradiation

doi: 10.11804/NuclPhysRev.23.02.185

ZHANG Chong-hong

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2006-06-20

Key words:

Abstract: This paper gives a review of our recent studies on the defect production in silicon carbide induced by energetic inert-gas-ion irradiation. The work includes the study of the dose threshold for helium bubble formation by combining TEM, RBS-channeling and PAS, the theoretical analysis of the dose threshold for bubble formation based on the Frozen-Matrix assumption, two types of bubble arrangement at different dose regions and the study of damage um-ion production behavior in the case of irradiation with heavier inert-gas-ions （ Ne, Xe） as a comparison to heliirradiation.

ZHANG Chong-hong. Defect Production in Silicon Carbide by Inert-gas-ion Irradiation[J]. Nuclear Physics Review, 2006, 23(2): 185-188. doi: 10.11804/NuclPhysRev.23.02.185

Citation:

ZHANG Chong-hong. Defect Production in Silicon Carbide by Inert-gas-ion Irradiation[J]. Nuclear Physics Review, 2006, 23(2): 185-188. doi: 10.11804/NuclPhysRev.23.02.185