FTIR Characterization of C-ion Implanted and  Pb-ion Irradiated 4H-SiC

ZHOU Li-hong; ZHANG Chong-hong; SONG Yin; YANG Yi-tao

doi:10.11804/NuclPhysRev.23.02.221

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Volume 23 Issue 2

Jun. 2006

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Article Navigation > Nuclear Physics Review > 2006 > 23(2): 221-223

ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221

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ZHOU Li-hong, ZHANG Chong-hong, SONG Yin, YANG Yi-tao. FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC[J]. Nuclear Physics Review, 2006, 23(2): 221-223. doi: 10.11804/NuclPhysRev.23.02.221

FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC

doi: 10.11804/NuclPhysRev.23.02.221

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2006-06-20

Abstract

4H-SiC specimens were implanted with C-ions and then irradiated with Pb-ions, and subsequently annealed at three different temperatures. The samples were investigated by using Fourier transformation infrared spectrum（FTIR） and Rutherford backward scattering（RBS）. The obtained FTIR spectra showed that there is a buried amorphous layer close to the ion-incident surface and there are several interference fringes in the range from 960 to 1 450 cm ^-1. The intensity of fringes decreases with the increase of annealing temperature. The obtained RBS spectra showed that the yield of Si atoms in 4H-SiC crystal decreases in a well-defined depth region after annealing at 1 373 K.
- 4H-SiC,
- FTIR,
- implantation,
- RBS,
- annealing
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

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FTIR Characterization of C-ion Implanted and Pb-ion Irradiated 4H-SiC

doi: 10.11804/NuclPhysRev.23.02.221

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2006-06-20

Key words:

4H-SiC /
FTIR /
implantation /
RBS /
annealing

Abstract: 4H-SiC specimens were implanted with C-ions and then irradiated with Pb-ions, and subsequently annealed at three different temperatures. The samples were investigated by using Fourier transformation infrared spectrum（FTIR） and Rutherford backward scattering（RBS）. The obtained FTIR spectra showed that there is a buried amorphous layer close to the ion-incident surface and there are several interference fringes in the range from 960 to 1 450 cm ^-1. The intensity of fringes decreases with the increase of annealing temperature. The obtained RBS spectra showed that the yield of Si atoms in 4H-SiC crystal decreases in a well-defined depth region after annealing at 1 373 K.

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