Study of Surface Morphology of Helium Implanted Silicon

LI Bing-sheng; #; YANG Yi-tao; ZHOU Li-hong

doi:10.11804/NuclPhysRev.25.02.144

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LI Bing-sheng, #, YANG Yi-tao, ZHOU Li-hong, . Study of Surface Morphology of Helium Implanted Silicon[J]. Nuclear Physics Review, 2008, 25(2): 144-147. doi: 10.11804/NuclPhysRev.25.02.144

Citation:

LI Bing-sheng, #, YANG Yi-tao, ZHOU Li-hong, . Study of Surface Morphology of Helium Implanted Silicon[J]. Nuclear Physics Review, 2008, 25(2): 144-147. doi: 10.11804/NuclPhysRev.25.02.144

Study of Surface Morphology of Helium Implanted Silicon

doi: 10.11804/NuclPhysRev.25.02.144

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduate School of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2008-06-20

Abstract

Ptype crystalline Si with (100) orientation was implanted by He ions with energy of 30 keV to a fluence of 5×1016 ions/cm2 . After implantation， pieces of these samples were subjected to thermal annealing at temperatures ranging from 600 ℃ to 1 000 ℃. The microstructures of the annealed sample surfaces were investigated by Atom Force Microscopy (AFM). It was found that the sample surfaces exhibited distinct morphological evolution with annealing temperature. The results were discussed by assuming that the near surface region contains a high ratio of He atoms to vacancies， which lead to the formation of highly pressurized He bubbles and consequently the change of sample surface via bubbles growth and helium release.
- CzSi,
- ion implantation,
- He bubble,
- atom force microscopy,
- surface morphology
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Study of Surface Morphology of Helium Implanted Silicon

doi: 10.11804/NuclPhysRev.25.02.144

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;2 Graduate School of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2008-06-20

Key words:

Abstract: Ptype crystalline Si with (100) orientation was implanted by He ions with energy of 30 keV to a fluence of 5×1016 ions/cm2 . After implantation， pieces of these samples were subjected to thermal annealing at temperatures ranging from 600 ℃ to 1 000 ℃. The microstructures of the annealed sample surfaces were investigated by Atom Force Microscopy (AFM). It was found that the sample surfaces exhibited distinct morphological evolution with annealing temperature. The results were discussed by assuming that the near surface region contains a high ratio of He atoms to vacancies， which lead to the formation of highly pressurized He bubbles and consequently the change of sample surface via bubbles growth and helium release.

LI Bing-sheng, #, YANG Yi-tao, ZHOU Li-hong, . Study of Surface Morphology of Helium Implanted Silicon[J]. Nuclear Physics Review, 2008, 25(2): 144-147. doi: 10.11804/NuclPhysRev.25.02.144

Citation:

LI Bing-sheng, #, YANG Yi-tao, ZHOU Li-hong, . Study of Surface Morphology of Helium Implanted Silicon[J]. Nuclear Physics Review, 2008, 25(2): 144-147. doi: 10.11804/NuclPhysRev.25.02.144