Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching

XUE Zhi-hao; SUN You-mei; #; CHANG Hai-long; LIU Jie; HOU Ming-dong; YAO Hui-jun; MO Dan; CHEN Yan-feng

doi:10.11804/NuclPhysRev.25.03.277

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Article Navigation > Nuclear Physics Review > 2008 > 25(3): 277-281

XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277

Citation:

XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277

Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching

doi: 10.11804/NuclPhysRev.25.03.277

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate School of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2008-09-20

Abstract

The 3D structures in silicon are increasingly coming to use in many fields. For example, the high resolution Xray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching microarray on the ntype silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electrochemical etching of HF, the optimized concentration of HF was determined and the micropore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.
- anisotropic etching,
- micropore array,
- electrochemical etching
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching

doi: 10.11804/NuclPhysRev.25.03.277

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate School of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2008-09-20

Key words:

Abstract: The 3D structures in silicon are increasingly coming to use in many fields. For example, the high resolution Xray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching microarray on the ntype silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electrochemical etching of HF, the optimized concentration of HF was determined and the micropore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.

Citation:

XUE Zhi-hao, SUN You-mei, #, CHANG Hai-long, LIU Jie, HOU Ming-dong, YAO Hui-jun, MO Dan, CHEN Yan-feng. Research on Fabrication Technology of Micropore Array in Silicon Using Electrochemical Etching[J]. Nuclear Physics Review, 2008, 25(3): 277-281. doi: 10.11804/NuclPhysRev.25.03.277