Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO

LI Tian-jing; GAO Xing-xin; LI Gong-ping#; LI Yu-hong

doi:10.11804/NuclPhysRev.26.03.238

PDF
Cite
Share
facebook

twitter

google

linkedin

Volume 26 Issue 3

Turn off MathJax

Article Contents

Article Navigation > Nuclear Physics Review > 2009 > 26(3): 238-241

LI Tian-jing, GAO Xing-xin, LI Gong-ping#, LI Yu-hong. Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO[J]. Nuclear Physics Review, 2009, 26(3): 238-241. doi: 10.11804/NuclPhysRev.26.03.238

Citation:

LI Tian-jing, GAO Xing-xin, LI Gong-ping#, LI Yu-hong. Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO[J]. Nuclear Physics Review, 2009, 26(3): 238-241. doi: 10.11804/NuclPhysRev.26.03.238

Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO

doi: 10.11804/NuclPhysRev.26.03.238

Institute of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2009-09-20

Abstract

In this paper， ion implantation techniques were used to study the photoluminescence(PL) of the Coimplanted crystal ZnO. After Coion implanted， the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions， respectively, have been compared and observed that the PL spectrum of the Coimplanted ZnO is similar to that of the Cuimplanted ZnO. We studied the influence of implantation dose on the PL of the Coimplanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.
- Cu,
- Co,
- ion implantation,
- ZnO,
- photoluminescence
References
Proportional views

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Get Citation

PDF

XML

Article Metrics

Article views(3401) PDF downloads(740) Cited by()

Proportional views

Photoluminescence of Lowenergy Co Ions Implanted Crystal ZnO

doi: 10.11804/NuclPhysRev.26.03.238

Institute of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2009-09-20

Key words:

Cu /
Co /
ion implantation /
ZnO /
photoluminescence

Abstract: In this paper， ion implantation techniques were used to study the photoluminescence(PL) of the Coimplanted crystal ZnO. After Coion implanted， the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions， respectively, have been compared and observed that the PL spectrum of the Coimplanted ZnO is similar to that of the Cuimplanted ZnO. We studied the influence of implantation dose on the PL of the Coimplanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.

Citation: