Raman  Spectroscopy  Study  of  Krimplanted  Silicon  Carbide

XU  Chao-liang; ZHANG  Chong-hong; LI  Bing-sheng; ZHANG Li-qing; YANG  Yi-tao; HAN  Lu-hui; JIA  Xiu-jun

doi:10.11804/NuclPhysRev.28.02.209

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Article Navigation > Nuclear Physics Review > 2011 > 28(2): 209-214

XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209

Citation:

XU Chao-liang, ZHANG Chong-hong, LI Bing-sheng, ZHANG Li-qing, YANG Yi-tao, HAN Lu-hui, JIA Xiu-jun. Raman Spectroscopy Study of Krimplanted Silicon Carbide[J]. Nuclear Physics Review, 2011, 28(2): 209-214. doi: 10.11804/NuclPhysRev.28.02.209

Raman Spectroscopy Study of Krimplanted Silicon Carbide

doi: 10.11804/NuclPhysRev.28.02.209

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate University of Chinese Academy of Sciences,Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2011-06-20

Abstract

Raman spectroscopy was used to study the structure changes of 6HSiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks， but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃， the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing， but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate， but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature， which is more obvious in low implanted specimens. At the same time， the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.
- 6H-SiC,
- ionimplantation,
- Raman spectrum,
- Relative Raman Intensity
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Raman Spectroscopy Study of Krimplanted Silicon Carbide

doi: 10.11804/NuclPhysRev.28.02.209

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate University of Chinese Academy of Sciences,Beijing 100049, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2011-06-20

Key words:

Abstract: Raman spectroscopy was used to study the structure changes of 6HSiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks， but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃， the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing， but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate， but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature， which is more obvious in low implanted specimens. At the same time， the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.

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