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Article Navigation >  Nuclear Physics Review  > 2011  >  28(3): 305-309

LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305
Citation: LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305
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Test of Double-sided Multistrip Silicon Detectors

doi: 10.11804/NuclPhysRev.28.03.305

  • 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China; 3 Institute of Microelectronics of Peking University, Beijing 100871, China

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2011-09-20
  • The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.
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Test of Double-sided Multistrip Silicon Detectors

doi: 10.11804/NuclPhysRev.28.03.305
  • 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China; 3 Institute of Microelectronics of Peking University, Beijing 100871, China
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2011-09-20

Abstract: The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, twodimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.

LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305
Citation: LI Zhan-kui, GONG Wei, TAN Ji-lian, WEI Ji-fang, WANG Zhu-sheng, HAN Li-xiang, TIAN Da-yu, YU Min. Test of Double-sided Multistrip Silicon Detectors[J]. Nuclear Physics Review, 2011, 28(3): 305-309. doi: 10.11804/NuclPhysRev.28.03.305
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