A HRXRD Study of GaN Irradiated with MeV Heavy Ions
doi: 10.11804/NuclPhysRev.28.03.332
- Received Date: 1900-01-01
- Rev Recd Date: 1900-01-01
- Publish Date: 2011-09-20
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Key words:
- GaN /
- HRXRD /
- irradiation damage
Abstract: Irradiation experiments of gallium nitride (GaN) with 2.3 MeV20 Ne8+ and 5.0 MeV84 Kr19+ respectively were performed. The irradiated samples were analyzed using the high\|resolution X\|ray diffraction (HRXRD) spectrometry. It was found that the diffraction peak of GaN (0001) exhibited regular shift to smaller diffraction angles with the increase of ion fluence for the both ions, and the diffraction peak split into a few sub\|peaks at higher irradiation dose. Underlying mechanisms of the observed peak shift and split were investigated, the contributions of different energy losses to the damage accumulation in the irradiated GaN were discussed.
Citation: | JIA Xiu-jun, ZHANG Chong-hong, ZHANG Li-qing, YANG Yi-tao, ZHANG Yong, HAN Lu-hui, XU Chao-liang, ZHANG Li-min. A HRXRD Study of GaN Irradiated with MeV Heavy Ions[J]. Nuclear Physics Review, 2011, 28(3): 332-336. doi: 10.11804/NuclPhysRev.28.03.332 |