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SONG Yin, ZHANG Chonghong, YANG Yitao, MEN Yancheng, GOU Jie, ZHANG Liqing. Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion[J]. Nuclear Physics Review, 2013, 30(4): 460-463. doi: 10.11804/NuclPhysRev.30.04.460
Citation: SONG Yin, ZHANG Chonghong, YANG Yitao, MEN Yancheng, GOU Jie, ZHANG Liqing. Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion[J]. Nuclear Physics Review, 2013, 30(4): 460-463. doi: 10.11804/NuclPhysRev.30.04.460
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Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion

doi: 10.11804/NuclPhysRev.30.04.460

  • Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2013-12-20
  • AlN thin film irradiated with 100 MeV 238U ions delivered from HIRFL (Heavy Ion Research Facility in Lanzhou) were investigated by Fourier Transform Infrared spectra, Raman spectra and Photoluminescence spectra. Phonon vibration absorption modes including A1(To), A1(Lo), E1(To) and E2 appeared in the irradiated samples. The irradiation made the Al—N bonds broken and the formation of Al—dangling bonds, which combined soon with oxygen atoms existing in air to form Al—O bonds. Blue light emission band are related to the two types of defects of VAl-ON-3N and VAl-2ON-2N and F-type defects aggregation. Green light emission band is due to energy transition among valence band of Al atoms in sapphire substrate.
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Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion

doi: 10.11804/NuclPhysRev.30.04.460
  • Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2013-12-20

Abstract: AlN thin film irradiated with 100 MeV 238U ions delivered from HIRFL (Heavy Ion Research Facility in Lanzhou) were investigated by Fourier Transform Infrared spectra, Raman spectra and Photoluminescence spectra. Phonon vibration absorption modes including A1(To), A1(Lo), E1(To) and E2 appeared in the irradiated samples. The irradiation made the Al—N bonds broken and the formation of Al—dangling bonds, which combined soon with oxygen atoms existing in air to form Al—O bonds. Blue light emission band are related to the two types of defects of VAl-ON-3N and VAl-2ON-2N and F-type defects aggregation. Green light emission band is due to energy transition among valence band of Al atoms in sapphire substrate.

SONG Yin, ZHANG Chonghong, YANG Yitao, MEN Yancheng, GOU Jie, ZHANG Liqing. Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion[J]. Nuclear Physics Review, 2013, 30(4): 460-463. doi: 10.11804/NuclPhysRev.30.04.460
Citation: SONG Yin, ZHANG Chonghong, YANG Yitao, MEN Yancheng, GOU Jie, ZHANG Liqing. Optical Characteristics of AlN Thin Film Irradiated with High Energy 238U Ion[J]. Nuclear Physics Review, 2013, 30(4): 460-463. doi: 10.11804/NuclPhysRev.30.04.460
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