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Article Navigation >  Nuclear Physics Review  > 2013  >  30(4): 471-476

ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
Citation: ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
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Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

doi: 10.11804/NuclPhysRev.30.04.471

  • School of Science, Tianjin University, Tianjin 300072, China;

  • Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;

  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2013-12-20
  • Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
    measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
    be attributed to the role of both B and B implanted induced vacancy-type defects.
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Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions

doi: 10.11804/NuclPhysRev.30.04.471
  • School of Science, Tianjin University, Tianjin 300072, China;
  • Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics,Chinese Academy of Sciences, Beijing 100049, China;
  • Received Date: 1900-01-01
  • Rev Recd Date: 1900-01-01
  • Publish Date: 2013-12-20

Abstract: Abstract：Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPAT
measurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect should
be attributed to the role of both B and B implanted induced vacancy-type defects.

ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
Citation: ZHANG Bei, ZHANG Peng, WANG Jun, ZHU Fei, CAO Xingzhong, WANG Baoyi, LIU Changlong. Thermal Evolution of Defects in Crystalline Silicon by Sequential Implantation of B and H Ions[J]. Nuclear Physics Review, 2013, 30(4): 471-476. doi: 10.11804/NuclPhysRev.30.04.471
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