An Improved System of Detecting Single Event Effect in SRAM

TONG Teng; SU Hong; WANG Xiaohui; LIU Jie; ZHANG Zhangang; LIU Tianqi; GU Song; YANG Zhenlei

doi:10.11804/NuclPhysRev.31.02.170

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Article Navigation > Nuclear Physics Review > 2014 > 31(2): 170-176

TONG Teng, SU Hong, WANG Xiaohui, LIU Jie, ZHANG Zhangang, LIU Tianqi, GU Song, YANG Zhenlei. An Improved System of Detecting Single Event Effect in SRAM[J]. Nuclear Physics Review, 2014, 31(2): 170-176. doi: 10.11804/NuclPhysRev.31.02.170

Citation:

TONG Teng, SU Hong, WANG Xiaohui, LIU Jie, ZHANG Zhangang, LIU Tianqi, GU Song, YANG Zhenlei. An Improved System of Detecting Single Event Effect in SRAM[J]. Nuclear Physics Review, 2014, 31(2): 170-176. doi: 10.11804/NuclPhysRev.31.02.170

An Improved System of Detecting Single Event Effect in SRAM

doi: 10.11804/NuclPhysRev.31.02.170

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2014-06-20

Abstract

The material research center in Institute of Modern Physics, Chinese Academy of Sciences (IMP,CAS) have made a fruitful achievements in the research of single event effects(SEEs) occurring in static random access memory (SRAM). However, there are some drawbacks exist in the two systems of detecting SEE owning by the material research center. Therefore, an improved method of detecting SEE is proposed, and the method functionality is implemented in a circuit. Further, a sequence of experiments are carried out in the beam radiation terminal of the Heavy Ion Facility in Lanzhou (HIRFL), and a bunch of experimental data are collected. The irradiation tests were carried out using ¹²⁹Xe for the SEE research of 65 nm SRAMs; Using ¹²C for the SEE research of the 65, 130 and 150 nm SRAMs with ECC module; Using ¹²⁹Xe for the SEL research of the common commercial SRAMs and so on. These experiments provide a statistical evidence of the effectiveness and robustness of the improved system. It is believed that the proposed system will be beneficial for detecting SEE in diverse settings, and it could be taken advantage of as a platform for future research on SEE tests in more intricate devices.
- SRAM,
- single event effect,
- detecting system,
- heavy ion
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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An Improved System of Detecting Single Event Effect in SRAM

doi: 10.11804/NuclPhysRev.31.02.170

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2014-06-20

Key words:

Abstract: The material research center in Institute of Modern Physics, Chinese Academy of Sciences (IMP,CAS) have made a fruitful achievements in the research of single event effects(SEEs) occurring in static random access memory (SRAM). However, there are some drawbacks exist in the two systems of detecting SEE owning by the material research center. Therefore, an improved method of detecting SEE is proposed, and the method functionality is implemented in a circuit. Further, a sequence of experiments are carried out in the beam radiation terminal of the Heavy Ion Facility in Lanzhou (HIRFL), and a bunch of experimental data are collected. The irradiation tests were carried out using ¹²⁹Xe for the SEE research of 65 nm SRAMs; Using ¹²C for the SEE research of the 65, 130 and 150 nm SRAMs with ECC module; Using ¹²⁹Xe for the SEL research of the common commercial SRAMs and so on. These experiments provide a statistical evidence of the effectiveness and robustness of the improved system. It is believed that the proposed system will be beneficial for detecting SEE in diverse settings, and it could be taken advantage of as a platform for future research on SEE tests in more intricate devices.

Citation: