Single Event Effect in Nano FinFET

LIU Baojun; CAI Li; DONG Zhiguang; XU Guoqiang

doi:10.11804/NuclPhysRev.31.04.516

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LIU Baojun, CAI Li, DONG Zhiguang, XU Guoqiang. Single Event Effect in Nano FinFET[J]. Nuclear Physics Review, 2014, 31(4): 516-521. doi: 10.11804/NuclPhysRev.31.04.516

Citation:

LIU Baojun, CAI Li, DONG Zhiguang, XU Guoqiang. Single Event Effect in Nano FinFET[J]. Nuclear Physics Review, 2014, 31(4): 516-521. doi: 10.11804/NuclPhysRev.31.04.516

Single Event Effect in Nano FinFET

doi: 10.11804/NuclPhysRev.31.04.516

Department of Aviation Ammunition Engineering, First Aviation College of Air Force,Xinyang 464000, Henan, China;
Science College, Air Force Engineering University, Xi’an 710051, China;

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2014-12-20

Abstract

FinFET presents more advantages than current bulk CMOS technologies, such as high speed, high density, lower power, more functionality and high scalability. A 3D single event effect model of nano-scale FinFET is simulated by using ISE TCAD. The considered physical models include mobility model, quantum effect model, recombination model and radiation effect model. The effects of the doping concentration, gate voltage, ion energy, parasitic capacitor, and technologies nodes on single event transient current in FinFET are analyzed. The possible mechanisms behind these effects are also presented. The results indicate some potential hardened technologies. It includes decreasing source doping concentration, increasing drain and substrate doping concentration, reducing ion energy,upgrading gate voltage (Vg) and optimizing parasitic capacitor.
- FinFET,
- single event effect,
- simulation,
- harden technology
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Single Event Effect in Nano FinFET

doi: 10.11804/NuclPhysRev.31.04.516

Department of Aviation Ammunition Engineering, First Aviation College of Air Force,Xinyang 464000, Henan, China;

Science College, Air Force Engineering University, Xi’an 710051, China;

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2014-12-20

Key words:

Abstract: FinFET presents more advantages than current bulk CMOS technologies, such as high speed, high density, lower power, more functionality and high scalability. A 3D single event effect model of nano-scale FinFET is simulated by using ISE TCAD. The considered physical models include mobility model, quantum effect model, recombination model and radiation effect model. The effects of the doping concentration, gate voltage, ion energy, parasitic capacitor, and technologies nodes on single event transient current in FinFET are analyzed. The possible mechanisms behind these effects are also presented. The results indicate some potential hardened technologies. It includes decreasing source doping concentration, increasing drain and substrate doping concentration, reducing ion energy,upgrading gate voltage (Vg) and optimizing parasitic capacitor.

LIU Baojun, CAI Li, DONG Zhiguang, XU Guoqiang. Single Event Effect in Nano FinFET[J]. Nuclear Physics Review, 2014, 31(4): 516-521. doi: 10.11804/NuclPhysRev.31.04.516

Citation:

LIU Baojun, CAI Li, DONG Zhiguang, XU Guoqiang. Single Event Effect in Nano FinFET[J]. Nuclear Physics Review, 2014, 31(4): 516-521. doi: 10.11804/NuclPhysRev.31.04.516