Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication

GAO Xin; YANG Shengsheng; FENG Zhanzu; CAO Zhou; MA Yali

doi:10.11804/NuclPhysRev.32.02.249

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Volume 32 Issue 2

Jun. 2015

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Article Navigation > Nuclear Physics Review > 2015 > 32(2): 249-253

GAO Xin, YANG Shengsheng, FENG Zhanzu, CAO Zhou, MA Yali. Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication[J]. Nuclear Physics Review, 2015, 32(2): 249-253. doi: 10.11804/NuclPhysRev.32.02.249

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GAO Xin, YANG Shengsheng, FENG Zhanzu, CAO Zhou, MA Yali. Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication[J]. Nuclear Physics Review, 2015, 32(2): 249-253. doi: 10.11804/NuclPhysRev.32.02.249

Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication

doi: 10.11804/NuclPhysRev.32.02.249

Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, China Academy of Space Technology, China Aerospace Science And Technology Corporation, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2015-06-20

Abstract

The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co- rays. The experimental results show the slope efficiency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power
degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit,due to higher fluence density of high energy electrons in GEO orbits.
- optoelectronic,
- radiation effect,
- displacement damage,
- total ionizing dose
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Radiation Damage Characterization of InGaAsP Laser Diodes for Space Laser Communication

doi: 10.11804/NuclPhysRev.32.02.249

Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, China Academy of Space Technology, China Aerospace Science And Technology Corporation, Lanzhou 730000, China

Received Date: 1900-01-01
Rev Recd Date: 1900-01-01
Publish Date: 2015-06-20

Key words:

Abstract: The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co- rays. The experimental results show the slope efficiency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power
degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit,due to higher fluence density of high energy electrons in GEO orbits.

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