Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions
doi: 10.11804/NuclPhysRev.33.03.358
- Received Date: 2015-06-24
- Rev Recd Date: 2015-09-21
- Publish Date: 2016-09-20
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Key words:
- heavy ion /
- anti-fuse PROM /
- single event latchup /
- single event upset
Abstract: Single event effects (SEEs) have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays (FPGA) of programmable-read-only-memory (PROM) in 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology.The variables of their memory size,written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions.The results show that,16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs.Additionally,16 Mbits PROMs have the higher reliability,if based on the viewpoint of the saturated single event upset cross-section.To the single event latchup,16 Mbits PROMs were exposed to a total fluence of 107 ions/cm2 at the linear energy transfer (LET) of 99.0 MeV·cm2/mg and no obvious fluctuation of current has been observed.Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology,especially in improving the threshold of LET at the zone of low LET value.
Citation: | GENG Chao, LI Xiaoyuan, LIN Yi, LUO Chunhua, XIE Wengang, DENG Yuliang, LI Da. Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions[J]. Nuclear Physics Review, 2016, 33(3): 358-364. doi: 10.11804/NuclPhysRev.33.03.358 |