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ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
Citation: ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
shu

Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+

doi: 10.11804/NuclPhysRev.33.03.365
  • 1.

    Ion beam & Optical Physical joint Laboratory of Xianyang Normal University and Institute of Modern Physics, Chinese Academy of Sciences, Xianyang 712000, Shanxi, China;

  • 2.

    Institute of Science and Technology for Laser and Particle Beams Xi'an Jiaotong University, Xi'an 710049, China;

  • 3.

    Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China

Funds:  National Natural Science Foundation of China (11605147,11075125, 11375138, 11505248); Specialized Research Fund for the Doctoral Program of Higher Education (20130201110066); Scientific Research Program Funded by Shaanxi Provincial Education Department(16JK1824); Scientific Research Foundation of Xianyang Normal University(12XSYK018); Teaching Reform Research Program of Xianyang Normal University(201402011)
  • Received Date: 2016-05-29
  • Rev Recd Date: 2016-08-03
  • Publish Date: 2016-09-20
  • The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.
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Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+

doi: 10.11804/NuclPhysRev.33.03.365
  • 1. Ion beam & Optical Physical joint Laboratory of Xianyang Normal University and Institute of Modern Physics, Chinese Academy of Sciences, Xianyang 712000, Shanxi, China;
  • 2. Institute of Science and Technology for Laser and Particle Beams Xi'an Jiaotong University, Xi'an 710049, China;
  • 3. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
Funds:  National Natural Science Foundation of China (11605147,11075125, 11375138, 11505248); Specialized Research Fund for the Doctoral Program of Higher Education (20130201110066); Scientific Research Program Funded by Shaanxi Provincial Education Department(16JK1824); Scientific Research Foundation of Xianyang Normal University(12XSYK018); Teaching Reform Research Program of Xianyang Normal University(201402011)
  • Received Date: 2016-05-29
  • Rev Recd Date: 2016-08-03
  • Publish Date: 2016-09-20

Abstract: The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.

ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
Citation: ZENG Lixia, XU Zhongfeng, ZHAO Yongtao, WU Fan, LIU Xueliang, CHENG Rui, ZHOU Xianming, LEI Yu, LIU Shidong, ZHANG Yanning. Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+[J]. Nuclear Physics Review, 2016, 33(3): 365-369. doi: 10.11804/NuclPhysRev.33.03.365
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