Performance Test of the CsI(TI)+Si-APD Detector

JIAO Lei; JIN Shilun; LI Jiaxing; WANG Jiansong; YANG Yanyun; MA Peng; MA Junbing; BAI Zhen; LIU Xingquan; ZHOU Jiren; DUAN Fangfang; ZHANG Xing

doi:10.11804/NuclPhysRev.34.02.190

In this paper, the working principle of Si-APD was introduced and the dark current of Si-APD was analyzed theoretically. The intermediate energy heavy ions, which are produced on the RIBLL(Radioactive Ion Beam Line in Lanzhou), were measured with CsI(Tl)+Si-APD detector. The energy resolution of CsI(Tl)+Si-APD detector is about 3% for heavy ions with energy around 20 MeV/u. It is also found that the energy resolution of detector can be in uenced by the dark current of Si-APD and the energy of incident particles.

Performance Test of the CsI(TI)+Si-APD Detector

1. College of Power Engineering, Chongqing University, Chongqing 400044, China;

2. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

3. Institute of Physical Science and Technology, Southwest University, Chongqing 400715, China

Funds: National Natural Science Foundation of China(U1432247, U1332126, 11075133, 11575256, 10205019); National Basic Research Program of China(2014CB845405); CAS "Light of West China" Program([2015]90)

Received Date: 2016-06-24

Rev Recd Date: 2016-08-24

Publish Date: 2017-06-20

Key words:

Abstract: In this paper, the working principle of Si-APD was introduced and the dark current of Si-APD was analyzed theoretically. The intermediate energy heavy ions, which are produced on the RIBLL(Radioactive Ion Beam Line in Lanzhou), were measured with CsI(Tl)+Si-APD detector. The energy resolution of CsI(Tl)+Si-APD detector is about 3% for heavy ions with energy around 20 MeV/u. It is also found that the energy resolution of detector can be in uenced by the dark current of Si-APD and the energy of incident particles.

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Reference (9)

[1]	CHEN Xiaoshuang, XU Jiao, HU Weida, et al. Infrared Tech-nology, 2015, 37(5): 353. (in Chinese)(陈效双, 许娇, 胡伟达, 等. 红外技术, 2015, 37(5): 353.)
[2]	YONG Chaoliang, DUAN Dong, XU Chun, et al. Infrared Technology, 2012, 34(4): 196. (in Chinese)(雍朝良, 段东, 许春, 等. 红外技术, 2012, 34(4): 196.)
[3]	CUI Wenkai. Study of The Novel Mesa Structure Avalanche Photodiode Based on Silicon[D]. Beijing: Beijing University of Technology, 2014. (in Chinese)(崔文凯. 新型台面结构硅基雪崩光电二极管的研究[D]. 北京: 北京工业大学, 2014.)
[4]	WANG Zhiwei. The Study of Structural Optimization on Reducing The Dark Current of Si-Based Micro-Pixel Array APD[D]. Harbin: Harbin Institute of Technology, 2014. (inChinese)(王志伟. 降低硅基微元阵APD暗电流结构优化的研究[D]. 哈尔滨: 哈尔滨工业大学, 2014.)
[5]	NIE Pengxuan, ZHENG Tao, ZHU Zhaowen, et al. Nuclear Electronics&Detection Technology, 2011, 31(6): 601. (in Chinese)(聂鹏煊, 郑涛, 祝兆文, 等. 核电子学与探测技术, 2011, 31(6):601.)
[6]	YAO Xiangwu, YANG Yanyun, WANG Jiansong, et al.Atomic Energy Science and Technology, 2010, 44(3): 358.(in Chinese)(姚向武, 杨彦云, 王建松, 等. 原子能科学技术, 2010, 44(3):358.)
[7]	WU Dapeng, ZHANG Xueheng, YANG Yanyun, et al. Nu-clear Techniques, 2009, 32(7): 550. (in Chinese)(武大鹏, 章学恒, 杨彦云, 等. 核技术, 2009, 32(7): 550.)
[8]	SONG Hailan, HUANG Hui, CUI Xuelin, et al. Semiconduc-tor Optoelectronics, 2010, 31(5): 702. (in Chinese)(宋海兰, 黄辉, 崔海林, 等. 半导体光电, 2010, 31(5): 702.)
[9]	FAN Ruirui, CHEN Ruofu, XU Hushan, et al. Nuclear Tech-niques, 2007, 30(6): 507. (in Chinese)(樊瑞睿, 陈若富, 徐瑚珊, 等. 核技术, 2007, 30(6): 507.)

Performance Test of the CsI(TI)+Si-APD Detector

doi: 10.11804/NuclPhysRev.34.02.190

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