Radiation-Induced &ldquo;Fake MBU&rdquo; by Heavy Ion in 65 nm SRAM with ECC

WANG Bin; LIU Jie; LIU Tianqi; XI Kai; YE Bing; HOU Mingdong; SUN Youmei; YIN Yanan; JI Qinggang; ZHAO Peixiong; LI Zongzhen

doi:10.11804/NuclPhysRev.35.01.066

In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.

Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China;

3. Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China

Funds: National Natural Science Foundation of China (11690041, 11675233)

Received Date: 2017-03-19

Rev Recd Date: 2017-04-25

Publish Date: 2018-03-20

Key words:

Abstract: In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.

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Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

doi: 10.11804/NuclPhysRev.35.01.066

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通讯作者: 陈斌, bchen63@163.com

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Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

doi: 10.11804/NuclPhysRev.35.01.066

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China;

3. Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China

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Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

doi: 10.11804/NuclPhysRev.35.01.066

Abstract

References

Proportional views

通讯作者: 陈斌, bchen63@163.com

Article Metrics

Proportional views

Radiation-Induced “Fake MBU” by Heavy Ion in 65 nm SRAM with ECC

doi: 10.11804/NuclPhysRev.35.01.066

1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China; 3. Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China

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1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;

2. University of Chinese Academy of Sciences, Beijing 100049, China;

3. Institute of Microelectronics of the Chinses Academy of Sciences, Beijing 100029, China