Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu<sub>13</sub> Clusters Deposition

ZHANG Shixu; LIU Huiwei; HE Yiwen; ZHANG Meiling; LI Gongping

doi:10.11804/NuclPhysRev.36.02.235

The formation of Cu film on Fe (001) surface by depositing Cu₁₃ clusters was investigated via the molecular dynamics simulation. The incident energy range of Cu₁₃ clusters was from 0.1 to 10.0 eV/atom, and the deposition rate was 1 clusters/ps. The temperature of substrate was 300, 700 and 1 000 K, respectively. The effects of incident energy of cluster and substrate temperature on the growth mode, surface roughness, defects distribution and epitaxy degree of film were studied. The simulation results show that the incident energy of Cu₁₃ clusters plays a dominant role in the growth mode of film. In addition, when the incident energy of Cu₁₃ clusters is 7.5 eV/atom and the substrate temperature is 300 K, the Cu film formed on Fe(001) surface is smoother, few defects and better epitaxy degree.

Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu₁₃ Clusters Deposition

1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;

2. Key Laboratory of Design of Special Function Materials and Structures Ministry of Education, Lanzhou University, Lanzhou 730000, China

Funds: National Natural Science Foundation of China (11604129); Fundamental Research Funds for Central Universities (lzujbky-2015-67, lzujbky-2019-56)

Received Date: 2018-09-15

Rev Recd Date: 2019-01-24

Publish Date: 2019-06-20

Key words:

molecular dynamics simulation /
film formation deposited by clusters deposition /
Cu₁₃ cluster /
Fe(001) surface

Abstract: The formation of Cu film on Fe (001) surface by depositing Cu₁₃ clusters was investigated via the molecular dynamics simulation. The incident energy range of Cu₁₃ clusters was from 0.1 to 10.0 eV/atom, and the deposition rate was 1 clusters/ps. The temperature of substrate was 300, 700 and 1 000 K, respectively. The effects of incident energy of cluster and substrate temperature on the growth mode, surface roughness, defects distribution and epitaxy degree of film were studied. The simulation results show that the incident energy of Cu₁₃ clusters plays a dominant role in the growth mode of film. In addition, when the incident energy of Cu₁₃ clusters is 7.5 eV/atom and the substrate temperature is 300 K, the Cu film formed on Fe(001) surface is smoother, few defects and better epitaxy degree.

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Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu₁₃ Clusters Deposition

doi: 10.11804/NuclPhysRev.36.02.235

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Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu₁₃ Clusters Deposition

doi: 10.11804/NuclPhysRev.36.02.235

1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;

2. Key Laboratory of Design of Special Function Materials and Structures Ministry of Education, Lanzhou University, Lanzhou 730000, China

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Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu13 Clusters Deposition

doi: 10.11804/NuclPhysRev.36.02.235

Abstract

References

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通讯作者: 陈斌, bchen63@163.com

Article Metrics

Proportional views

Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu13 Clusters Deposition

doi: 10.11804/NuclPhysRev.36.02.235

1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China; 2. Key Laboratory of Design of Special Function Materials and Structures Ministry of Education, Lanzhou University, Lanzhou 730000, China

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Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu₁₃ Clusters Deposition

Molecular Dynamics Simulation Study on the Film Formation by Low Energy Cu₁₃ Clusters Deposition

1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;

2. Key Laboratory of Design of Special Function Materials and Structures Ministry of Education, Lanzhou University, Lanzhou 730000, China