Abstract: A large number of pixel sensor chips are integrated on the beam detector in CEE experiment, in order to provide stable power voltage for these chips, and meet the high requirements of silicon pixel chips for small area and low power consumption of power supply circuit, a low voltage differential linear regulator(Low-dropout regulator, LDO) circuit compensated by a single Miller capacitor is realized in 130 nm CMOS process of GSMC. The proposed LDO based on the flip voltage following(Flipped Voltage Follower, FVF) structure which can achieve high stability, fast transient performance and ultra-low power consumption when the load current changes rapidly, and does not require off-chip capacitance when using small transistors. The experimental results show that the structure can drive a capacitive load of 0~100 pF when the load current is 20 mA, the line regulation is 3.3 mV/V, the quiescent current is 8.5 μA, and the layout area is only 103.5 μm×95.2 μm, which is suitable for highly complex detector system chips.