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张耀锋, 杜园园, 张春雷, 曹李刚, 兰小飞, 黄永盛. 4H-SiC探测器的温度及辐照性能研究[J]. 原子核物理评论, 2024, 41(1): 486-490. DOI: 10.11804/NuclPhysRev.41.2023CNPC08
引用本文: 张耀锋, 杜园园, 张春雷, 曹李刚, 兰小飞, 黄永盛. 4H-SiC探测器的温度及辐照性能研究[J]. 原子核物理评论, 2024, 41(1): 486-490. DOI: 10.11804/NuclPhysRev.41.2023CNPC08
Yaofeng ZHANG, Yuanyuan DU, Chunlei ZHANG, Ligang CAO, Xiaofei LAN, Yongsheng HUANG. Temperature and Radiation Performance of 4H-SiC Detector[J]. Nuclear Physics Review, 2024, 41(1): 486-490. DOI: 10.11804/NuclPhysRev.41.2023CNPC08
Citation: Yaofeng ZHANG, Yuanyuan DU, Chunlei ZHANG, Ligang CAO, Xiaofei LAN, Yongsheng HUANG. Temperature and Radiation Performance of 4H-SiC Detector[J]. Nuclear Physics Review, 2024, 41(1): 486-490. DOI: 10.11804/NuclPhysRev.41.2023CNPC08

4H-SiC探测器的温度及辐照性能研究

Temperature and Radiation Performance of 4H-SiC Detector

  • 摘要: 针对极端环境下耐高温和耐辐照半导体探测器的研制需求,利用外延层厚度为100 µm的4H-SiC外延片通过欧姆接触和肖特基接触制备成肖特基二极管,封装成肖特基二极管探测器。在25 ºC~150 ºC的环境下,测量探测器的I-V特性曲线。结果表明,在温度≤105 ºC时,漏电流曲线变化较小。当偏置电压为−500 V时,温度从25 ºC上升至105 ºC,漏电流的变化率为0.33%/ºC。利用北京大学化学系60Co放射源对探测器进行辐照,对比总剂量1 Mrad的实验前、实验后的探测器I-V特性变化。结果表明,辐照前后探测器的漏电流无明显变化。

     

    Abstract: Schottky diodes are fabricated using 100 µm thick 4H-SiC epitaxial wafers with Ohmic and Schottky contacts, and packaged as SiC detectors to meet the requirements of high temperature and radiation environments. The current-voltage (I-V) curves are measured in the range of 25 to 150 ºC. The experimental results show that the leakage current changes very little when the temperature is less than or equal to 105 ºC. The change rate of leakage current is 0.33%/ºC, when the reverse bias is −500 V and the temperature rises from 25 to 105 ºC. The SiC detector is irradiated by 60Co source in Peking University. The I-V characteristics of the SiC detector are compared before and after the irradiation experiment with total dose of 1 Mrad. The experimental data indicates that the leakage current has almost no significant change.

     

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